| Symbol | Parameter | 中文翻译 |
| ID | Continuous drain current | 漏极直流电流 |
| VGS | Gate-source voltage | 栅-源电压 |
| VDS | Drain-source voltage | 漏-源电压 |
| EAS | single pulse avalchane energy | 单脉冲雪崩击穿能量 |
| Rth(j-a) | Thermal resistance from junction to ambient | 结到环境的热阻 |
| Rth(j-c) | Thermal resistance from junction to case | 结到管壳的热阻 |
| V(BR)DSS | Drain-source breakdown voltage | 漏源击穿电压 |
| V(GS)th | Gate threshold voltage | 栅源阈值电压 |
| IGSS | Gate-body leakage current | 漏-源短路的栅极电流 |
| IDSS | Zero gate voltage drain current | 栅-源短路的漏极电流 |
| rDS(on) | Drain-source on-resistance | 漏源通态电阻 |
| gfs | Forward trans conductance | 跨导 |
| VSD | Diode forward voltage | 漏源间体内反并联二极管正向压降 |
| Ciss | Input capacitance | 栅-源电容 |
| Coss | Output capacitance | 漏-源电容 |
| Crss | Reverse transfer capacitance | 反向传输电容 |
| Rg | Gate resistance | 栅极电阻 |
| td(on) | Turn-on delay time | 开通延迟时间 |
| tr | Rise time | 上升时间 |
| td(off) | Turn-off delay time | 关断延迟时间 |
| tf | Fall time | 下降时间 |
| IDM | Pulsed drain current | 最大脉冲漏电流 |
| PD | Power dissipation | 耗散功率 |
| Tj | operating junction temperature range | 结温 |
| Tstg | storage temperature range | 存储温度 |